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BSM 75 GB 170 DN2
IGBT Power Module Preliminary data * Half-bridge * Including fast free-wheeling diodes * Package with insulated metal base plate * RG on,min = 22 Ohm Type BSM 75 GB 170 DN2 Maximum Ratings Parameter Collector-emitter voltage Collector-gate voltage Symbol Values 1700 1700 Unit V
VCE
IC
Package HALF-BRIDGE 1
Ordering Code C67070-A2702-A67
1700V 110A
VCE VCGR VGE IC
RGE = 20 k
Gate-emitter voltage DC collector current
20 A 110 75
TC = 25 C TC = 80 C
Pulsed collector current, tp = 1 ms
ICpuls
220 150
TC = 25 C TC = 80 C
Power dissipation per IGBT
Ptot
625
W + 150 -55 ... + 150 0.2 0.63 4000 16 11 F 55 / 150 / 56 Vac mm K/W C
TC = 25 C
Chip temperature Storage temperature Thermal resistance, chip case Diode thermal resistance, chip case Insulation test voltage, t = 1min. Creepage distance Clearance DIN humidity category, DIN 40 040 IEC climatic category, DIN IEC 68-1
Tj Tstg RthJC RthJCD Vis
-
Semiconductor Group
1
Jul-16-1996
BSM 75 GB 170 DN2
Electrical Characteristics, at Tj = 25 C, unless otherwise specified Parameter Symbol min. Static Characteristics Gate threshold voltage Values typ. max. Unit
VGE(th)
4.8 5.5 3.4 4.6 0.5 2 6.2 3.9 5.3
V
VGE = VCE, IC = 5 mA
Collector-emitter saturation voltage
VCE(sat)
-
VGE = 15 V, IC = 75 A, Tj = 25 C VGE = 15 V, IC = 75 A, Tj = 125 C
Zero gate voltage collector current
ICES
0.75 -
mA
VCE = 1700 V, VGE = 0 V, Tj = 25 C VCE = 1700 V, VGE = 0 V, Tj = 125 C
Gate-emitter leakage current
IGES
400
nA
VGE = 20 V, VCE = 0 V
AC Characteristics Transconductance
gfs
27 11 1 0.28 -
S nF -
VCE = 20 V, IC = 75 A
Input capacitance
Ciss Coss
-
VCE = 25 V, VGE = 0 V, f = 1 MHz
Output capacitance
VCE = 25 V, VGE = 0 V, f = 1 MHz
Reverse transfer capacitance
Crss
-
VCE = 25 V, VGE = 0 V, f = 1 MHz
Semiconductor Group
2
Jul-16-1996
BSM 75 GB 170 DN2
Electrical Characteristics, at Tj = 25 C, unless otherwise specified Parameter Symbol min. Switching Characteristics, Inductive Load at Tj = 125 C Turn-on delay time Values typ. max. Unit
td(on)
400 800
ns
VCC = 1200 V, VGE = 15 V, IC = 75 A RGon = 22
Rise time
tr
150 300
VCC = 1200 V, VGE = 15 V, IC = 75 A RGon = 22
Turn-off delay time
td(off)
650 1000
VCC = 1200 V, VGE = -15 V, IC = 75 A RGoff = 22
Fall time
tf
90 140
VCC = 1200 V, VGE = -15 V, IC = 75 A RGoff = 22
Free-Wheel Diode Diode forward voltage
VF
2.3 2.1 2.8 -
V
IF = 75 A, VGE = 0 V, Tj = 25 C IF = 75 A, VGE = 0 V, Tj = 125 C
Reverse recovery time
trr
0.3 -
s
IF = 75 A, VR = -1200 V, VGE = 0 V diF/dt = -800 A/s, Tj = 125 C
Reverse recovery charge
Qrr
C
IF = 75 A, VR = -1200 V, VGE = 0 V diF/dt = -800 A/s Tj = 25 C Tj = 125 C
7 21 -
Semiconductor Group
3
Jul-16-1996
BSM 75 GB 170 DN2
Power dissipation Ptot = (TC) parameter: Tj 150 C
650 W 550
Safe operating area IC = (VCE) parameter: D = 0, TC = 25C , Tj 150 C
10 3
A
tp = 800.0ns
1 s
Ptot
500 450 400
IC
10 2
10 s
100 s
350 300 250 200
10 1
1 ms
10 ms
10 0 150 100 50 0 0 20 40 60 80 100 120 C 160 10 -1 0 10 10
1
DC
10
2
10
3
V
TC
VCE
Collector current IC = (TC) parameter: VGE 15 V , Tj 150 C
120 A 100
Transient thermal impedance Zth JC = (tp) parameter: D = tp / T
10 0
IGBT
K/W
IC
90 80 70 60 50 40 30 20
ZthJC
10 -1
D = 0.50 0.20 10
-2
0.10 0.05 0.02 0.01 single pulse
10 0 0 20 40 60 80 100 120 C 160 10 -3 -5 10 10
-4
10
-3
10
-2
10
-1
s 10
0
TC
tp
Semiconductor Group
4
Jul-16-1996
BSM 75 GB 170 DN2
Typ. output characteristics
Typ. output characteristics
IC = f (VCE)
parameter: tp = 80 s, Tj = 25 C
150 A 130 17V 15V 13V 11V 9V 7V
IC = f (VCE)
parameter: tp = 80 s, Tj = 125 C
150 A 130 17V 15V 13V 11V 9V 7V
IC
120 110 100 90 80 70 60 50 40 30 20 10 0 0.0
IC
120 110 100 90 80 70 60 50 40 30 20 10 0 0.0
1.0
2.0
3.0
4.0
V
6.0
1.0
2.0
3.0
4.0
V
6.0
VCE
VCE
Typ. transfer characteristics
IC = f (VGE)
parameter: tp = 80 s, VCE = 20 V
300 A 260
IC
240 220 200 180 160 140 120 100 80 60 40 20 0 0
2
4
6
8
10
V 14 VGE
Semiconductor Group
5
Jul-16-1996
BSM 75 GB 170 DN2
Typ. gate charge VGE = (QGate) parameter: IC puls = 75 A
20 V
Typ. capacitances
C = f (VCE)
parameter: VGE = 0, f = 1 MHz
10 2
nF
VGE
16 14 12 10 8
C
800 V
1200 V
10 1
Ciss
10 0 6 4 2 0 0.0 10 -1 0 Crss Coss
0.2
0.4
0.6
0.8
C
1.1
5
10
15
20
25
30
QGate
V 40 VCE
Reverse biased safe operating area
Short circuit safe operating area
ICpuls = f(VCE) , Tj = 150C parameter: VGE = 15 V
2.5
ICsc = f(VCE) , Tj = 150C parameter: VGE = 15 V, tSC 10 s, L < 50 nH
12
ICpuls/IC
ICsc/IC
8 1.5 6 1.0 4
0.5 2
0.0 0 250 500 750 1000 1250 1500 V 2000 VCE
0 0 250 500 750 1000 1250 1500 V 2000 VCE
Semiconductor Group
6
Jul-16-1996
BSM 75 GB 170 DN2
Typ. switching time
Typ. switching time
I = f (IC) , inductive load , Tj = 125C
par.: VCE = 1200 V, VGE = 15 V, RG = 22
10 4
t = f (RG) , inductive load , Tj = 125C
par.: VCE = 1200 V, VGE = 15 V, IC = 75 A
10 4
ns t 10
3
ns t tdoff 10 tdoff tdon tr tdon tr
3
10 2 tf
10 2
tf
10 1 0
20
40
60
80
100 120 140
A
180
10 1 0
20
40
60
80
IC
120
RG
Typ. switching losses
Typ. switching losses
E = f (IC) , inductive load , Tj = 125C
par.: VCE = 1200 V, VGE = 15 V, RG = 22
200 mWs Eon E 160 140 120 100 80 60 40 20 0 0 Eoff
E = f (RG) , inductive load , Tj = 125C
par.: VCE = 1200 V, VGE = 15 V, IC = 75 A
200 mWs Eon E 160 140 120 100 80 60 40 20 0 0 Eoff
20
40
60
80
100 120 140
A
180
20
40
60
80
IC
120
RG
Semiconductor Group
7
Jul-16-1996
BSM 75 GB 170 DN2
Forward characteristics of fast recovery reverse diode IF = f(VF) parameter: Tj
150 A 130
Transient thermal impedance Zth JC = (tp) parameter: D = tp / T
10 0
Diode
K/W
Tj=125C
IF
120 110 100 90 80 70 60 50 40 30 20 10 0 0.0
Tj=25C
ZthJC
10 -1
10 -2 D = 0.50 0.20 0.10 10 -3 single pulse 0.05 0.02 0.01
0.5
1.0
1.5
2.0
2.5
V VF
3.5
10 -4 -5 10
10
-4
10
-3
10
-2
10
-1
s 10
0
tp
Semiconductor Group
8
Jul-16-1996
BSM 75 GB 170 DN2
Circuit Diagram
Package Outlines Dimensions in mm Weight: 250 g
Semiconductor Group
9
Jul-16-1996

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